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Devices Fabricated using PLD (
Dec. 03, 2009) 11:30-13:30
IT5. Multiferroic MEMS device fabrication using pulsed laser deposited Dy modified BiFeO3 thin films
V. R. Palkar
Centre for Excellence in Nanoelectronics, Department of Electrical Engineering,
Indian Institute of Technology Bombay, Mumbai 400076
Email: palkar@ee.iitb.ac.in
IT6. Growth
and Characterization of ZnO based Transparent Resistive Random Access Memory
Devices
using Pulsed Laser Deposition
and their switching
Characteristics
P. Misra*, A. K. Das and L. M. Kukreja
LMPD, Raja
Ramanna Centre for Advanced Technology, Indore 452 013
*Email: pmisra@rrcat.gov.in
IT7. Resistive Random Access Memory Effects in Oxide
based planar and MIM structures:
Properties
and Mechanisms
Utpal S. Joshi
Department of Physics, School of Sciences, Gujarat University,
Ahmedabad-380 009
Email: usjoshi@gmail.com
OP4.
Manganite – Semiconductor Bilayers: For Device
Applications
J.
Mona1, R. J. Choudhary2, D. M. Phase2
and S. N. Kale1*
1Department
of Electronic Science and Research Centre, Fergusson College,
Pune 04
2UGC-DAE
CSR, Indore Centre, Khandwa Road, Indore 452017, India.
*Email:
sangeetakale2004@gmail.com
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Organized By |
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RRCAT,
Indore |
IIT Madras |
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